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8 Mbit 1.8V SPI Serial Flash
A Microchip Technology Company
SST25WF080
Not Recommended for New Designs
DC Characteristics
Table 12: DC Operating Characteristics
Limits
Symbol Parameter
Min
Typ 1
Max
Units
Test Conditions
I DDR
I DDR2
I DDW
I SB
Read Current
Read Current
Program and Erase Current
Standby Current
2
4
6
5
5
9
10
20
mA
mA
mA
μA
CE#=0.1 V DD /0.9 V DD @33 MHz, SO=open
CE#=0.1 V DD /0.9V DD @75 MHz, SO=open
CE#=V DD
CE#=V DD , V IN =V DD or V SS
I LI
I LO
V IL
V IH
V OL
V OH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
0.7 V DD
V DD -0.2
1
1
0.3
0.2
μA
μA
V
V
V
V
V IN =GND to V DD , V DD =V DD Max
V OUT =GND to V DD , V DD =V DD Max
V DD =V DD Min
V DD =V DD Max
I OL =100 μA, V DD =V DD Min
I OH =-100 μA, V DD =V DD Min
T12.0 25024
1. Value characterized, not fully tested in production.
Table 13: Capacitance (T A = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
C OUT
C IN1
1
Output Pin Capacitance
Input Capacitance
V OUT = 0V
V IN = 0V
12 pF
6 pF
T13.0 25024
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 14: Reliability Characteristics
Symbol
N END1
T DR1
I LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T14.0 25024
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
?2012 Silicon Storage Technology, Inc.
27
DS25024B
03/12
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